PART |
Description |
Maker |
PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET N-channel Trenchmos (tm) logic level FET N-channel TrenchMOS⑩ logic level FET From old datasheet system N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA N-channel TrenchMOS logic level FET N-channel TrenchMOS⑩ logic level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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IS611-SM IS610G IS610XG ISOCOMCOMPONENTSLTD-IS611X |
1 CHANNEL FET OUTPUT OPTOCOUPLER
|
ISOCOM COMPONENTS LTD
|
2SK2141 K2141 2SK2141JM |
N-channel enhancement type DMOS FET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
BF997 |
N-channel dual-gate MOS-FET Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PS7901D-1A |
.NEPOC Series. (OCMOS FET) 4-PIN SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.75 pF) 1-ch Optical Coupled MOS FET
|
Renesas Electronics Corporation
|
MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
IRFU420B IRFR420B IRFU420BTU IRFR420BTM IRFR420BTF |
500V N-Channel B-FET / Substitute of IRFR420 & IRFR420A 500V N-Channel B-FET / Substitute of IRFU420 & IRFU420A 500V N-Channel MOSFET 2.3 A, 500 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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FAIRCHILD[Fairchild Semiconductor] International Rectifier Fairchild Semiconductor, Corp.
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